Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Cros, Antoine ^a,c   Romanjek, Krunoslav ^b   Fleury, Dominique ^a   Harrison, Samuel ^b   Cerutti, Robin ^a   Coronel, Philippe ^a   Dumont, Benjamin ^a   Pouydebasque, Arnaud ^b   Wacquez, Romain ^a   Duriez, Blandine ^b   Gwoziecki, Romain ^d   Boeuf, Frederic ^d   Brut, Hugues ^a   Ghibaudo, Gérard ^c   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (France)

^c MINATEC   (France)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC CURRENTS; ELECTRON DEVICES; MOSFET DEVICES;

ANNEALING TEMPERATURE; BALLISTICITY; CMOS SCALING; MOBILITY DEGRADATION; PILE UPS; REMOTE COULOMB SCATTERING; SHORT CHANNEL MOSFETS;

SULFATE MINERALS;

EID: 46049114538     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346872     Document Type: Conference Paper

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