Monte Carlo study of apparent mobility reduction in nano-MOSFETs

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 382-385

  Huet, K ^a   Saint Martin, J ^a   Bournel, A ^a   Galdin Retailleau, S ^a   Dollfus, P ^a   Ghibaudo, G ^b   Mouis, M ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; ELECTRIC PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SCATTERING;

BALLISTIC MOBILITY; CHANNEL LENGTH; MOBILITY REDUCTION; SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 39549118360     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430958     Document Type: Conference Paper

References (17)

1. A. Svizhenko and M. P. Anantram, "Role of scattering in nanotransistors," IEEE Trans. Electron Devices, vol. 50, pp. 1459-1466, 2003.
2. J. Saint Martin, A. Bournel, and P. Dollfus, "On the ballistic transport in nanometer-scaled DG MOSFETs," IEEE Trans. Electron Devices, vol. 51, pp. 1148-1155, 2004.
3. P. Palestri, D. Esseni, S. Eminente, C. Fiegna, E. Sangiorgi, and L. Selmi, "Understanding quasi-ballistic transport in nano-MOSFETs: part I - Scattering in the channel and in the drain," IEEE Trans. Electron Devices, vol. 52, pp. 2727-2735, 2005.
4. K. Romanjek, F. Andrieu, T. Ernst, and G. Ghibaudo, " Characterization of the effective mobility by split C(V) technique in sub 0.1 um Si and SiGe PMOSFETs," Solid-State Electron., vol. 49, pp. 721-726, 2005.
5. J. Lusakowski, W. Knap, Y. Meziani, J. P. Cesso, A. El Fatimy, R. Tauk, et al., "Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors," Appl. Phys. Lett., vol. 87, pp. 053507-3, 2005.
6. W. Chaisantikulwat, M. Mouis, G. Ghibaudo, C. Gallon, C. Fenouillet-Beranger, D. K. Maude, et al., "Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors," Solid-State Electron., vol. 50, pp. 637-643, 2006.
7. J. Widiez, T. Poiroux, M. Vinet, M. Mouis, and S. Deleonibus, "Experimental Comparison Between Sub-0.1-μm Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility," IEEE Trans. Nanotechnology, vol. 5, pp. 643-648, 2006.
8. A. Cros, K. Romanjek, D. Fleury, S. Harrison, R. Cerutti, P. Coronel, et al., "Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling," IEDM Tech. Dig., pp. 663-666, 2006.
9. F. Andrieu, Transistors CMOS décananométriques à canaux contraints sur silicium massif ou sur SOI, PhD Thesis. France: INPG, 2005.
10. G. Baccarani and S. Reggiani, "A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects," IEEE Trans. Electron Devices, vol. 46, pp. 1656-1666, 1999.
11. M. S. Shur, "Low ballistic mobility in submicron HEMTs," IEEE Electron Device Lett., vol. 23, pp. 511-513, 2002.
12. J. Wang and M. Lundstrom, "Ballistic transport in high electron mobility transistors," IEEE Trans. Electron Devices, vol. 50, pp. 1604-1609, 2003.
13. J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat, and P. Dollfus, "Monte Carlo simulation of Double Gate MOSFET including multi sub-band description," J. Comput. Electron., doi: 10.1007/s10825-006-0043-4.
14. M. F. Hamer, "First-order parameter extraction on enhancement silicon MOS transistors," IEE Proceedings. Part I. Solid-state and electron devices, vol. 133, pp. 49-54, 1986.
15. J. Saint-Martin, A. Bournel, and P. Dollfus, "Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation," Solid-State Electron., vol. 50, pp. 94-101, 2006.
16. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proceedings of the IEEE, vol. 55, pp. 2192-2193, 1967.
17. To calculate the mean free path, we cumulate the distance covered by each carrier during the crossing of the channel. Dividing this distance by the number of scattering events that he has undergone, we obtain the carrier free path. At the end of the simulation, the mean free path is the average of all carriers' free paths.