Experimental investigations on carrier transport in Si nanowire transistors: Ballistic efficiency and apparent mobility

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2960-2967

  Wang, Runssheng ^a   Liu, Hongwei ^a   Huang, Ru ^a   Zhuge, Jing ^a   Zhang, Liangliang ^a   Kim, Dong Won ^b   Zhang, Xing ^a   Park, Donggun ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Ballistic transport; Channel backscattering characteristics; Flux method; Mobility; Silicon nanowire transistor (SNWT)

Indexed keywords

BALLISTICS; CARRIER TRANSPORT; CIVIL AVIATION; EXPERIMENTS; EXPLOSIVES; GALLIUM ALLOYS; IMPACT RESISTANCE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON; TRANSISTORS; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORT; CHANNEL BACKSCATTERING CHARACTERISTICS; FLUX METHOD; MOBILITY; SILICON NANOWIRE TRANSISTOR (SNWT);

CARRIER MOBILITY;

EID: 56549087011     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005152     Document Type: Article

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