Growth of bulk GaN and AlN: Progress and challenges

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1302-1315

  Avrutin, Vitaliy ^a   Silversmith, Donald J ^b   Mori, Yusuke ^c   Kawamura, F ^c   Kitaoka, Y ^c   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

^b AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Ammonothermal method; GaN; GaN bulk crystals; High pressure GaN growth; Na flux GaN

Indexed keywords

ALUMINUM NITRIDE; EFFICIENCY; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LATTICE MISMATCH; LIGHT EMITTING DIODES; QUANTUM THEORY; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; THERMOELECTRIC EQUIPMENT;

AMMONOTHERMAL METHOD; GAN BULK CRYSTALS; GAN GROWTH; HETEROJUNCTION FIELD EFFECT TRANSISTOR; HIGH-POWER SWITCHING DEVICE; HYDRIDE VAPOR PHASE EPITAXY; INTERNAL QUANTUM EFFICIENCY; THERMAL AND LATTICE MISMATCHES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 77953687345     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2044967     Document Type: Conference Paper

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