Effects of ammonia gas on threshold pressure and seed growth for bulk GaN single crystals by Na flux method

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 1-5

  Iwahashi, Tomoya ^a   Kawamura, Fumio ^a   Morishita, Masanori ^a   Kai, Yasunori ^a   Yoshimura, Masashi ^a   Mori, Yusuke ^a   Sasaki, Takatomo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Single crystal growth; A2. Growth from melt; B1. Nitrides; B2. Semiconducting III V materials; B3. Laser diodes; B3. Light emitting diodes

Indexed keywords

AMMONIA; CRYSTAL GROWTH; LIGHT EMITTING DIODES; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

SEED GROWTH;

SINGLE CRYSTALS;

EID: 0037501699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00900-X     Document Type: Article

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