Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 403-407

  Freitas Jr , J A ^a   Tischler, J G ^a   Kim, J H ^b   Kumagai, Y ^c   Koukitu, A ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Korea University   (South Korea)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Emission; A1. Impurities; A2. Freestanding films; A3. Grown from vapor; B1. Nitrides; B2. Semiconductor

Indexed keywords

CRYSTAL IMPURITIES; DOPING (ADDITIVES); GALLIUM NITRIDE; IRON; NUCLEATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; VAPOR PHASE EPITAXY;

CRYSTALLINE QUALITY; FREESTANDING FILMS; GROWN FROM VAPOR;

THICK FILMS;

EID: 34347331175     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.031     Document Type: Article

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