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Volumn 286, Issue 2, 2006, Pages 494-497

The process of GaN single crystal growth by the Na flux method with Na vapor

Author keywords

A2. Growth from solutions; A2. Single crystal growth; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRUCIBLES; CRYSTAL GROWTH; DISSOLUTION; GALLIUM NITRIDE; PROBABILITY; SODIUM;

EID: 29344467887     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.073     Document Type: Article
Times cited : (18)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.