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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

Growth of high-quality large GaN crystal by Na flux LPE method.

(6) Kawamura, F a Imade, M a Yoshimura, M a Mori, Y a Kitaoka, Y a Sasaki, T a

a OSAKA UNIVERSITY (Japan)

Author keywords

GaN; LPE; Na flux; Single crystal; Substrate

Indexed keywords

CARBON ADDITIVES; DISLOCATION DENSITIES; FLUX METHODS; GAN; GAN CRYSTALS; GAN SUBSTRATES; HIGH QUALITIES; LOW DISLOCATION DENSITIES; LPE; MECHANICAL STIRRINGS; NA FLUX; SINGLE CRYSTAL SUBSTRATES; THERMAL CONVECTIONS;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SODIUM; SODIUM COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 65349186459 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.807434 Document Type: Conference Paper

Times cited : (6)

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