Growth of bulk GaN by HVPE on pressure grown seeds

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Grzegory, I ^a   LUcznik B ^a   Bockowski M ^a   Pastuszka, B ^a   Krysko M ^a   Kamler, G ^a   Nowak, G ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Bulk GaN by HVPE; Low dislocation density GaN; Pressure grown GaN seeds

Indexed keywords

CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

BULK GAN BY HVPE; LOW DISLOCATION DENSITY GAN; PRESSURE GROWN GAN SEEDS;

GALLIUM NITRIDE;

EID: 33646694808     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.645976     Document Type: Conference Paper

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