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Volumn 291, Issue 1, 2006, Pages 72-76
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GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2
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Author keywords
A2. Single crystal growth; B1. Gallium compounds; B2. Semiconducting III V materials
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Indexed keywords
MAGNETIC FLUX;
NITROGEN COMPOUNDS;
OPTICAL PROPERTIES;
RAMAN SCATTERING;
SINGLE CRYSTALS;
SEMICONDUCTING III-V MATERIALS;
SINGLE CRYSTAL GROWTH;
GALLIUM NITRIDE;
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EID: 33749334332
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.03.016 Document Type: Article |
Times cited : (16)
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References (24)
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