Preparation and characterization of single-crystal aluminum nitride substrates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Schowalter, Leo J ^a,b   Rojo, J Carlos ^b   Yakolev, Nikolai ^a   Shusterman, Yuriy ^a   Dovidenko, Katherine ^a,c   Wang, Rungjun ^a   Bhat, Ishwara ^a   Slack, Glen A ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Crystal IS Inc   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CONDENSATION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; EPITAXIAL GROWTH; ETCHING; MICROWAVE DEVICES; SINGLE CRYSTALS; SUBLIMATION; THERMAL CONDUCTIVITY;

CHEMICAL COMPATIBILITY; EDGE DISLOCATIONS; GROWTH MECHANISM;

ALUMINUM NITRIDE;

EID: 3242786439     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004622     Document Type: Conference Paper

References (5)

1. G.A. Slack and T.F. McNelly, J. Crystal Growth 34, 263 (1976); and G.A. Slack and T.F. McNelly, J. Crystal Growth 42, 560 (1977).
2. G.A. Slack and T.F. McNelly, J. Crystal Growth 34, 263 (1976); and G.A. Slack and T.F. McNelly, J. Crystal Growth 42, 560 (1977).
3. J. Schowalter, J.C, Rojo, G.A. Slack, Y. Shusterman, R. Wang, I. Bhat, and G. Arunmozhi, J. Crystal Growth (accepted 99).
4. J.R. Mileham, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R. J. Shul, S.P. Kilcoyne. Appl. Phys. Lett. 67, 1119 (1995).
5. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, MRS Internet J. Nitride Semicond. Res. 4S1, G6.46 (1999).