Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 702-708

  Gogova, D ^a,b   Siche, D ^a   Fornari, R ^a   Monemar, B ^c   Gibart, P ^d   Dobos, L ^e   Pecz B ^e   Tuomisto, F ^f   Bayazitov, R ^g   Zollo, G ^h  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c LINKÖPING UNIVERSITY   (Sweden)

^d LUMILOG   (France)

^e RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^f AALTO UNIVERSITY   (Finland)

^g ZAVOISKY PHYSICAL TECHNICAL INSTITUTE   (Russian Federation)

^h SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; LATTICE CONSTANTS; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

BUFFER LAYER; DISLOCATION DENSITY; III-NITRIDE; LUMINESCENCE BAND;

GALLIUM NITRIDE;

EID: 33645695774     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/024     Document Type: Article

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