Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

Journal of Applied Physics

Volumn 89, Issue 12, 2001, Pages 7960-7965

  Litwin Staszewska, E ^a   Suski, T ^a   Piotrzkowski, R ^a   Grzegory, I ^a   Bockowski, M ^a   Robert, J L ^b   Konczewicz L ^b   Wasik, D ^c   Kaminska E ^d   Cote, D ^e   Clerjaud, B ^e  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITY OF WARSAW   (Poland)

^d Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^e CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035875213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1368873     Document Type: Article

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