SCOPUS 정보 검색 플랫폼

Applied Physics B: Lasers and Optics

Volumn 98, Issue 4, 2010, Pages 779-789

Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

(8) Chen, J R a Wu, Y C a Ling, S C a Ko, T S a Lu, T C a Kuo, H C a Kuo, Y K b Wang, S C a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; AUGER RECOMBINATION PROCESS; CARRIER DISTRIBUTIONS; CRITICAL FACTORS; DIFFERENT EFFECTS; ELECTRON OVERFLOW; ELECTROSTATIC FIELD; INGAN QUANTUM WELLS; INGAN/GAN; MULTIPLE QUANTUM WELLS; NON-RADIATIVE; NONUNIFORM; OPERATION CURRENTS; PHYSICAL MECHANISM; PIEZOELECTRIC POLARIZATIONS; SIMULATION RESULT;

AUGERS; LIGHT EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 77951769389 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-009-3856-6 Document Type: Article

Times cited : (49)

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