Carrier mobility model for GaN

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 111-115

  Mnatsakanov, Tigran T ^a   Levinshtein, Michael E ^b   Pomortseva, Lubov I ^a   Yurkov, Sergey N ^a   Simin, Grigory S ^c   Khan, M Asif ^c  

^a All Russian Electrical Engineering Institute   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of South Carolina   (United States)

Author keywords

Gallium nitride; Low field mobility

Indexed keywords

APPROXIMATION THEORY; CARRIER MOBILITY; COMPUTER SIMULATION; DOPING (ADDITIVES); THERMAL EFFECTS;

LOW-FIELD MOBILITY;

GALLIUM NITRIDE;

EID: 0037211020     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00256-3     Document Type: Article

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