Differential carrier lifetime in AlGaN based multiple quantum well deep UV light emitting diodes at 325 nm

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 B, 2002, Pages

  Shatalov, Maxim ^a   Chitnis, Ashay ^a   Koudymov, Alexey ^a   Zhang, Jianping ^a   Adivarahan, Vinod ^a   Simin, Grigory ^a   Khan, Muhammad Asif ^a  

^a University of South Carolina   (United States)

Author keywords

AlGaN; Lifetime; Recombination; UV LED

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC IMPEDANCE MEASUREMENT; ESTIMATION; LIGHT EMITTING DIODES; PHOTOCURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAVIOLET RADIATION;

ALUMINUM GALLIUM NITRIDE; BAND TO BAND RADIATIVE RECOMBINATION; ULTRAVIOLET LIGHT EMITTING DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037110145     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1146     Document Type: Article

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