Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers

Journal of Lightwave Technology

Volumn 26, Issue 3, 2008, Pages 329-337

  Chen, Jun Rong ^a   Lee, Chung Hsien ^b   Ko, Tsung Shine ^a   Chang, Yi An ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Kuo, Yen Kuang ^b   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

AlInGaN; Electronic blocking layer (EBL); InGaN; Numerical simulation; Semiconductor lasers

Indexed keywords

CHARGE DENSITY; COMPUTER SIMULATION; LEAKAGE CURRENTS; LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD CURRENT DENSITY;

BUILT-IN POLARIZATION; CARRIER OVERFLOW; ELECTRONIC BLOCKING LAYER;

QUANTUM WELL LASERS;

EID: 40749124428     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2007.909908     Document Type: Article

References (41)

1. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin, Germany: Springer-Verlag, 1997.
2. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 310-320, Mar./Apr. 2002.
3. T. Asano, T. Tojyo, T. Mizuno, M. Takeya, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, and M. Ikeda, "100-mW kink-free blue-violet laser diodes with low aspect ratio," IEEE J. Quantum Electron., vol. 39, no. 1, pp. 135-140, Jan. 2003.
4. S. Kamiyama, K. Iida, T. Kawashima, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, M. Iwaya, H. Amano, and I. Akasaki, "UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1069-1073, Sep./Oct. 2005.
5. H. Y. Ryu, H. Ha, S. N. Lee, K. K. Choi, T. Jang, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung, T. Sakong, H. G. Kim, K. S. Kim, Y. H. Kim, O. H. Nam, and Y. J. Park, "Single-mode blue-violet laser diodes with low beam divergence and high COD level," IEEE Photon. Technol. Lett., vol. 18, no. 9, pp. 1001-1003, May 2006.
6. L. H. Peng, C. W. Chuang, and L. H. Lou, "Piezoelectric effects in the optical properties of strained InGaN quantum wells," Appl. Phys. Lett., vol. 74, no. 6, pp. 795-797, Feb. 1999.
7. J. Piprek, R. Farrell, S. DenBaars, and S. Nakamura, "Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 7-9, Jan. 2006.
8. G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa, P. Prystawko, M. Leszczyñski, I. Grzegory, S. Porowski, and S. Kokenyesi, "Fully-screened polarization-induced electric fields in blue/violet InGaN/GaN light-emitting devices grown on bulk GaN," Appl. Phys. Lett., vol. 87, no. 4, p. 041109, Jul. 2005.
9. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire," Appl. Phys. Lett., vol. 81, no. 3, pp. 469-471, Jul. 2002.
10. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, vol. 406, no. 6798, pp. 865-868, Aug. 2000.
11. X. Ni, Ü. Özgür, A. A. Baski, H. Morkoş, L. Zhou, D. J. Smith, and C. A. Tran, "Epitaxial lateral overgrowth of (1122) semipolar GaN on (1100)m-plane sapphire by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 90, no. 18, p. 182 109, Apr. 2007.
12. R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode," Appl. Phys. Lett., vol. 87, no. 23, p. 231 110, Dec. 2005.
13. H. Yu, L. K. Lee, T. Jung, and P. C. Ku, "Photoluminescence study of semipolar {1011} InGaN/GaN multiple quantum wells grown by selective area epitaxy," Appl. Phys. Lett., vol. 90, no. 14, p. 141 906, Apr. 2007.
14. T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, "Highquality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire," Appl. Phys. Lett., vol. 89, no. 5, p. 051 914, Jul. 2006.
15. A. Chakraborty, K. C. Kim, F.Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ SiN nanomask," Appl. Phys. Lett., vol. 89, no. 4, p. 041903, Jul. 2006.
16. M. A. Khan, J. W.Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, "Lattice and energy band engineering in AlInGaN/GaN heterostructures," Appl. Phys. Lett., vol. 76, no. 9, pp. 1161-1163, Feb. 2000.
17. J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. S. Shur, and R. Gaska, "Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers," Appl. Phys. Lett., vol. 77, no. 17, pp. 2668-2670, Oct. 2000.
18. LASTIP Version 2005.11. Burnaby, BC, Canada, Crosslight Softw., 2005. Burnaby, BC, Canada.
19. S. L. Chuang and C. S. Chang, "k. p method for strained wurtzite semiconductors," Phys. Rev. B, Condens. Matter, vol. 54, no. 4, pp. 2491-2504, Jul. 1996.
20. S. L. Chuang and C. S. Chang, "Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions," Appl. Phys. Lett., vol. 68, no. 12, pp. 1657-1659, Mar. 1996.
21. S. L. Chuang, "Optical gain of strained wurtzite GaN quantum-well lasers," IEEE J. Quantum Electron., vol. 32, no. 10, pp. 1791-1800, Oct. 1996.
22. 1-xN quantum-well lasers," IEEE J. Quantum Electron. vol. 34, no. 3, pp. 526-534, Mar. 1998.
23. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, "Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers," J. Appl. Phys., vol. 84, no. 4, pp. 1813-1819, Aug. 1998.
24. B. Romero, J. Arias, I. Esquivias, and M. Cada, "Simple model for calculating the ratio of the carrier capture and escape times in quantumwell lasers," Appl. Phys. Lett., vol. 76, no. 12, pp. 1504-1506, Mar. 2000.
25. J. Piprek, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. San Diego, CA: Academic, 2003.
26. "LASTIP User's Manual Version 2005.11," 1st ed. Crosslight Softw., Burnaby, BC, Canada, 2005.
27. K. Domen, R. Soejima, A.Kuramata, and T. Tanahashi, "Electron overflow to the AlGaN p-cladding layer in InGaN/GaN/AlGaN MQW laser diodes," MRS Internet J. Nitride Semicond. Res., vol. 3, no. 2, pp. 2-7, 1998.
28. Y.-K. Kuo and Y.-A. Chang, "Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance," IEEE J. Quantum Electron., vol. 40, no. 5, pp. 437-444, May 2004.
29. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol. 94, no. 6, pp. 3675-3691, Sep. 2003.
30. y As long-wavelength strained quantum-well lasers," IEEE J. Quantum Electron., vol. 35, no. 5, pp. 771-782, May 1999.
31. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, Jun. 2001.
32. V. Fiorentini, F. Bernardini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures," Appl. Phys. Lett., vol. 80, no. 7, pp. 1204-1206, Feb. 2002.
33. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G.Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/ GaN heterostructures," J. Appl. Phys., vol. 87, no. 1, pp. 334-344, Jan. 2000.
34. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Appl. Phys. Lett., vol. 77, no. 2, pp. 250-252, Jul. 2000.
35. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, "Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures," Appl. Phys. Lett., vol. 73, no. 14, pp. 2006-2008, Oct. 1998.
36. 1-xN/GaN heterojunction interfaces," Appl. Phys. Lett., vol. 84, no. 23, pp. 4644-4646, Jul. 2004.
37. F. Renner, P. Kiesel, G. H. Dõhler,M. Kneissl, C. G. Van de Walle, and N. M. Johnson, "Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy," Appl. Phys. Lett., vol. 81, no. 3, pp. 490-492, Jul. 2002.
38. T. Peng and J. Piprek, "Refractive index of AlGaInN alloys," Electron. Lett., vol. 32, no. 24, pp. 2285-2286, Nov. 1996.
39. S.-H. Wei and A. Zunger, "Valence band splittings and band offsets of AlN, GaN, and InN," Appl. Phys. Lett., vol. 69, no. 18, pp. 2719-2721, Oct. 1996.
40. Y.-K. Kuo, B.-T. Liou, M.-L. Chen, S.-H. Yen, and C.-Y. Lin, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics," Opt. Commun., vol. 231, no. 1-6, pp. 395-402, Feb. 2004.
41. 1-xN," Appl. Phys. Lett., vol. 80, no. 7, pp. 1210-1212, Feb. 2002.