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Volumn 515, Issue 10, 2007, Pages 4488-4491

Band offsets of InXGa1-XN/GaN quantum wells reestimated

Author keywords

InGaN; Photoluminescence; Quantum wells

Indexed keywords

BAND STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33847021954     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.139     Document Type: Article
Times cited : (24)

References (21)
  • 7
    • 33847049697 scopus 로고    scopus 로고
    • Gil B. (Ed), Oxford University press, New York
    • In: Gil B. (Ed). Low-Dimensional Nitride Semiconductors (2002), Oxford University press, New York 234
    • (2002) Low-Dimensional Nitride Semiconductors , pp. 234


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.