Optimization of the active-layer structure for the deep-UV AlGaN light-emitting diodes

IEEE Journal of Quantum Electronics

Volumn 42, Issue 8, 2006, Pages 820-826

  Huang, Man Fang ^a   Lu, Tsung Hung ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

AlGaN; Band structure; Carrier distribution; Light emitting diode (LED); Numerical simulation; Polarization effect

Indexed keywords

ACTIVE LAYER; AL COMPOSITION; ALGAN; ASYMMETRIC BANDS; BAND OFFSETS; BARRIER HEIGHTS; BARRIER WIDTHS; BOWING PARAMETERS; CARRIER DISTRIBUTIONS; DEEP-UV; HOLE DENSITIES; LAYER STRUCTURES; LOW HOLE CONCENTRATION; N-DOPED; NONUNIFORM; NUMERICAL SIMULATION; OUTPUT POWER; POLARIZATION EFFECT; QUANTUM WELL; SIMULATION PROGRAM; STRUCTURE PARAMETER; WELL WIDTH;

BAND STRUCTURE; COMPUTER SIMULATION; DIODES; DOPING (ADDITIVES); LIGHT EMISSION; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; SOLIDS;

LIGHT EMITTING DIODES;

EID: 60149088542     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.877217     Document Type: Article

References (36)

1. V. Adivarahan, W. H. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska, and M. Asif Kkan, "250 nm. AlGaN light-emitting diodes," Appl. Phys. Lett., vol.85, pp. 2175-2177, 2004.
2. M. Razeghi and M. Henini, Optoelectronic Devices: III-Nitrides. Amsterdam, The Netherlands: Elsevier, 2004.
3. J. Piprek, C. Moe, S. Keller, S. Nakamura, and S. P. DenBaars, "Internal efficiency analysis of 280 nm light emitting diodes," Proc. SPIE, vol.5594, pp. 177-184, 2004. (Pubitemid 40479984)
4. S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effect in AlGaN/GaN and GaN/AlGaN/GaN heterostructures," J. Appl. Phys., vol.93, pp. 10114-10118, 2003.
5. H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, and T. Saitoh, "Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells," Appl. Phys. Lett., vol.83, pp. 4791-4793, 2003.
6. H. Hirayama, "Quaternary InAlGaN-based high efficiency ultraviolet light-emitting diodes," J. Appl. Phys., vol.97, 2005, 091101.
7. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, and M. A. Khan, "Crack-free thick AlGaN grown on sapphire using AIN/AlGaN superlattices for strain management," Appl. Phys. Lett., vol.80, pp. 3542-3544, 2002.
8. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang, and M. Asif Khan, "AlN/AlGaN superlattices as a dislocation filter for lowthreading-dislocation thick AlGaN layers on a sapphire," Appl. Phys. Lett., vol.81, pp. 604-606, 2002.
9. J. P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M. Asif Khan, "AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced longwave emission," Appl. Phys. Lett., vol.83, pp. 3456-3458, 2003.
10. 1-xN interlayers," Appl. Phys. Lett., vol.83, pp. 4140-4142, 2003.
11. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, "4.5 mW operation of AlGaNbased 267 nm deep-ultraviolet light-emitting diodes," Appl. Phys. Lett., vol.83, pp. 4701-4703, 2003.
12. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, "High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well," Appl. Phys. Lett., vol.84, pp. 1046-1048, 2004.
13. A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, and M. A. Khan, "Lowtemperature operation of AlGaN single-quantum-well light emitting diodes with deep ultraviolet emission at 285 nm," Appl. Phys. Lett., vol.81, pp. 2938-2940, 2002.
14. H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata, and Y. Aoyagi, "Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells," Appl. Phys. Lett., vol.80, pp. 37-39, 2002.
15. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. A. Khan, "Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm," Appl. Phys. Lett., vol.81, pp. 4910-4912, 2002.
16. G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, "AlN/AlGalnN superlattice light-emitting diodes at 280 nm," J. Appl. Phys., vol.93, pp. 1363-1366, 2003.
17. A. Hanlon, P. M. Pattison, J. F. Kaeding, R. Sharma, P. Fini, and S. Nakamura, "292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base," Jpn. J. Appl. Phys., vol.42, pp. L638-640, 2003.
18. S.-H. Yen, B.-T. Liou, M.-L. Chen, and Y.-K. Kuo, "Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers," Proc. SPIE, vol.5628, pp. 156-163, 2005.
19. F. Bernardini, V. Fiorentini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructure," Appl. Phys. Lett., vol.80, pp. 1204-1206, 2002.
20. F. Bernardini and V. Fiorentini, "Nonlinear macroscopic polarization in III-V nitride alloys," Phys. Rev. B, vol.64, no.085207, pp. 1-7, 2001.
21. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGan/Gan heterostructures," J. Appl. Phys., vol.85, pp. 3222-3233, 1999.
22. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, "Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures," Appl. Phys. Lett., vol.73, pp. 2006-2008, 1998.
23. APSYS Version 2005.3, 2nd ed. Burnaby, BC, Canada: Crosslight Software, 2005.
24. APSYS User's Manual Version 2003.12, 2nd ed. Burnaby, BC, Canada: Crosslight Software, 2004.
25. S. L. Chuang, "Optical gain of strained wurtzite GaN quantum-well lasers," IEEE J. Quantum. Electron., vol.32, no.10, pp. 1791-1800, Oct. 1996.
26. 1-xN," J. Appl. Phys., vol.88, pp. 6476-6482, 2000.
27. S. H. Wei and A. Zunger, "Valence band splittings and band offsets of AlN, GaN, and InN," Appl. Phys. Lett., vol.69, pp. 2719-2721, 1996.
28. S. L. Chuang and C. S. Chang, "A band structure model of strained quantum-well wurtzite semiconductors," Semicond. Sci. Technol., vol.12, pp. 252-1163, 1997.
29. APSYS Reference Manual Version 2003.12, 2nd ed. Burnaby, BC, Canada: Crosslight Software, 2004.
30. Crosslight Device Simulation Software-A General Description, Version 2003.12,1st ed. Burnaby, BC, Canada: Crosslight Software, 2003.
31. Y. K. Kuo and Y. A. Chang, "Effect of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,"IEEE J. Quantum. Electron., vol.40, no.5, pp. 437-443, May 2004.
32. S. Nakamura, M. Senoh, S. Nakahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes grown in GaN substrates with a fundamental transverse mode," Jpn. J. Appl. Phys., vol.37, pp. L1020-L1022, 1998. (Pubitemid 128593846)
33. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm," App. Phys. Lett., vol.76, pp. 22-41, 2000.
34. G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, "Optical investigations of AlGaN on GaN epitaxial films," Appl. Phys. Lett., vol.74, pp. 2456-2458, 1999. (Pubitemid 129307056)
35. S. F. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars, "Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes," Appl. Phys. Lett., vol.73, pp. 496-498, 1998.
36. 1-xN-GaN multiple quantum well, structures: Effect of Si doping in the barriers," Phys. Rev., B, vol.64, no.0245339, pp. 1-7, 2001.