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Volumn 92, Issue 5, 2008, Pages

Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; OPTICAL PUMPING; SAMPLING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 38949146387     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839305     Document Type: Article
Times cited : (360)

References (11)
  • 7
    • 0001471184 scopus 로고    scopus 로고
    • JOAOD6 0740-3232 10.1364/JOSAA.15.001192, (); We assume an in-plane dipole distribution, corresponding to heavy hole-electron transitions. This is supported both by theoretical band structure arguments (Refs.) and by experimental measurements (Ref.). The small wiggles in the curves of Fig. are caused by guided modes being cut off in the GaN layer.
    • H. Benisty, R. Stanley, and M. Mayer, J. Opt. Soc. Am. A JOAOD6 0740-3232 10.1364/JOSAA.15.001192 15, 1192 (1998); We assume an in-plane dipole distribution, corresponding to heavy hole-electron transitions. This is supported both by theoretical band structure arguments (Refs.) and by experimental measurements (Ref.). The small wiggles in the curves of Fig. are caused by guided modes being cut off in the GaN layer.
    • (1998) J. Opt. Soc. Am. A , vol.15 , pp. 1192
    • Benisty, H.1    Stanley, R.2    Mayer, M.3
  • 9
    • 0000070839 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.54.2491.
    • S. L. Chuang and C. S. Chang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.2491 54, 2491 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 2491
    • Chuang, S.L.1    Chang, C.S.2
  • 10
    • 0141990606 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1600519.
    • I. Vurgaftman and J. R. Meyer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1600519 94, 3675 (2003).
    • (2003) J. Appl. Phys. , vol.94 , pp. 3675
    • Vurgaftman, I.1    Meyer, J.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.