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Volumn , Issue , 2007, Pages 279-301

Ultraviolet Light-Emitting Diodes

Author keywords

Comparison; Device structure; Experimental results; Nitride semiconductor devices; Performance optimization; Physical models; Physical parameters; Simulated results; Ultraviolet light emitting diodes

Indexed keywords


EID: 52149101503     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527610723.ch13     Document Type: Chapter
Times cited : (9)

References (52)
  • 1
    • 0026961530 scopus 로고
    • Room temperature ultraviolet/blue light emitting devices based on AlGaN/GaN multi-layered structure
    • in Extended Abstracts of the 1992 International Conf. Solid State Devices and Materials, Aug.
    • I. Akasaki and H. Amano, "Room temperature ultraviolet/blue light emitting devices based on AlGaN/GaN multi-layered structure," in Extended Abstracts of the 1992 International Conf. Solid State Devices and Materials, Aug. 1992, pp. 327-329.
    • (1992) , pp. 327-329
    • Akasaki, I.1    Amano, H.2
  • 24
    • 84889867860 scopus 로고    scopus 로고
    • APSYS Version 2005.03.11 by Crosslight Software Inc., Burnaby, Canada
    • APSYS Version 2005.03.11 by Crosslight Software Inc., Burnaby, Canada. (http://www.crosslight.com)
  • 26
    • 84905894675 scopus 로고    scopus 로고
    • Semiconductor Optoelectronic Device:Introduction to Physics and Simulation
    • Academic Press, San Diego
    • J. Piprek: Semiconductor Optoelectronic Device:Introduction to Physics and Simulation (Academic Press, San Diego, 2003).
    • (2003)
    • Piprek, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.