Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaNGaN multiple quantum wells on bulk GaN substrates

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Franssen, G ^a   Grzanka, S ^a   Czernecki, R ^a   Suski, T ^a   Marona, L ^a   Riemann, T ^b   Christen, J ^b   Teisseyre, H ^a   Valvin, P ^c   Lefebvre, P ^c   Perlin, P ^a   Leszczynski M ^a   Grzegory, I ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; PIT DENSITY; PROFILE FLUCTUATIONS; RADIATIVE RECOMBINATION;

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20944436564     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897066     Document Type: Article

References (26)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995).
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Appl. Phys. Lett. 68, 2105 (1996).
4. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
5. A. H. Herzog, D. L. Keune, and M. G. Craford, J. Appl. Phys. 43, 600 (1972).
6. S. Chichibu, K. Wada, and S. Nakamura, Appl. Phys. Lett. 71, 2346 (1997).
7. Y.-H. Cho, Appl. Phys. Lett. 83, 2578 (2003).
8. F. Bertram, Phys. Status Solidi B 228, 35 (2001).
9. P. A. Crowell, D. K. Young, S. Keller, E. L. Hu, and D. D. Awschalom, Appl. Phys. Lett. 72, 927 (1998).
10. J. Kim, K. Samiee, J. O. White, J.-M. Myoung, and K. Kim, Appl. Phys. Lett. 80, 989 (2002).
11. M. Takeguchi, M. R. McCartney, and D. J. Smith, Appl. Phys. Lett. 84, 2103 (2004).
12. R. Seguin, Appl. Phys. Lett. 84, 4023 (2004).
13. I. Grzegory, Acta Phys. Pol. A 100, 229 (2001).
14. K. Hiramatsu, MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).
15. T. Suski, Appl. Phys. Lett. 84, 1236 (2004).
16. P. Lefebvre, Appl. Phys. Lett. 78, 1252 (2001).
17. P. Lefebvre, Appl. Phys. Lett. 78, 1538 (2001).
18. P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, Appl. Phys. Lett. 71, 569 (1997).
19. Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998).
20. Q. Li, S. J. Xu, W. C. Cheng, M. H. Xie, S. Y. Tong, C. M. Che, and H. Yang, Appl. Phys. Lett. 79, 1810 (2001).
21. K. Kazlauskas, Appl. Phys. Lett. 83, 3722 (2003).
22. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burns, Phys. Rev. B 32, 1043 (1985).
23. S. F. Chichibu, Y. Kawakami, and T. Sota, in Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, edited by, S. Nakamura, and, S. F. Chichibu, (Taylor & Francis, London, 2000).
24. X. Chen, B. Henderson, and K. P. O'Donnell, Appl. Phys. Lett. 60, 2672 (1992).
25. S. F. Chichibu, Appl. Phys. Lett. 79, 4319 (2001).
26. M. S. Minsky, S. Watanabe, and N. Yamada, J. Appl. Phys. 91, 5176 (2002).