Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Gardner, N F ^a   Muller G O ^a   Shen, Y C ^a   Chen, G ^a   Watanabe, S ^a   Gotz W ^a   Krames, M R ^a  

^a Philips Lumileds Lighting Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; HETEROJUNCTIONS; INDIUM COMPOUNDS; QUANTUM EFFICIENCY; WAVELENGTH;

ACTIVE LAYER THICKNESS; PEAK WAVELENGTH;

LIGHT EMITTING DIODES;

EID: 37149027248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2807272     Document Type: Article

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