Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance

IEEE Journal of Quantum Electronics

Volumn 40, Issue 5, 2004, Pages 437-444

  Kuo, Yen Kuang ^a   Chang, Yi An ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

InGaN; Numerical simulation; Optical properties; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

ELECTRONIC CURRENT OVERFLOW; INHOMOGENEOUS CARRIER DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2442464834     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.826437     Document Type: Article

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