3D simulation and analysis of AlGaN/GaN ultraviolet light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5366, Issue , 2004, Pages 127-136

  Piprek, Joachim ^a   Katona, Tom ^a   DenBaars, Steven P ^a   Li, Simon ^b  

^a University of California   (United States)

^b Crosslight Software Inc   (Canada)

Author keywords

AlGaN GaN quantum wells; LED; Light emitting diode; Numerical simulation; Ultraviolet light source

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CARRIER MOBILITY; COMPUTER SIMULATION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT POLARIZATION; ULTRAVIOLET RADIATION;

IONIZATION EFFICIENCY; OUTPUT POWER; SHORT-RANGE COMMUNICATION; SOLID-STATE LIGHTING;

LIGHT EMITTING DIODES;

EID: 3543084457     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.543266     Document Type: Conference Paper

References (9)

1. T. Katona, Ph.D. Thesis, "Development of Ultraviolet Nitride-based Light-Emitting Diodes," University of California at Santa Barbara, Electrical and Computer Engineering Department, 2003.
2. APSYS 2003.11.01, Crosslight Software, Burnaby, Canada (http://www.crosslight.com).
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8. V. Fiorentini, F. Bernardini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures, " Appl. Phys. Lett., vol. 80, pp. 1204-1206, 2002.
9. S. Nakamura and S. F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes, Taylor & Francis, London, 2000.