Electron overflow to the AlGaN p-cladding layer in InGaN/GaN/AlGaN MQW laser diodes

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Domen, Kay ^a   Soejima, Reiko ^a   Kuramata, Akito ^a   Tanahashi, Toshiyuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; ELECTRIC CURRENTS; FERMI LEVEL; HEAT CONDUCTION; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LUMINESCENCE; OPTICAL PUMPING; PROBLEM SOLVING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; VELOCITY MEASUREMENT;

CONDUCTION BAND; LASER OSCILLATIONS; OPTICAL STORAGE; THERMAL VELOCITY;

GALLIUM NITRIDE;

EID: 4043152738     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000740     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, and T. Matsushita, Post deadline Papers of IEEE Lasers and Electro-Optics Society, PD1.1 (1997)
2. S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, H Kiyoku, Y Sugimoto, Jpn. J. Appl. Phys. 35, L74-L76 (1996).
3. H. Amano, T. Asahi, I. Akasaki, Jpn. J. Appl. Phys. 29, L205 (1990).
4. Shuji Nakamura, Masayuki Senoh, Takashi Mukai, Appl. Phys. Lett. 62, 2390-2392 (1993).
5. S. Strite, H. Morkoç, J. Vac. Sci. Technol. B 10, 1237-1266 (1992).
6. E. A. Albanesi, W. R. L. Lambrecht, B. Segall, J. Vac. Sci. Technol. B 12, 2470-2474 (1994).
7. SH Wei, A Zunger, Appl. Phys. Lett. 69, 2719-2721 (1996).
8. G. Martin, A. Botchkarev, A. Rockett, H. Morkoc, Appl. Phys. Lett. 68, 2541-2543 (1996).
9. R. Soejima, unpublished.
10. LASTIP Manual Ver. 3.4 (Crosslight Software Inc., 1995)
11. J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, Appl. Phys. Lett. 65, 2211-2213 (1994).
12. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, B. Segall, Appl. Phys. Lett. 65, 610-612 (1994).
13. J. R. Waldrop, R. W. Grant, Appl. Phys. Lett. 68, 2879-2881 (1996).
14. A. Salvador, G. Liu, W. Kim, O. Aktas, A. Botchkarev, H. Morkoc, Appl. Phys. Lett. 67, 3322-3324 (1995).
15. A. Bykhovski, B. Gelmont, M. Shur, A. Khan, J. Appl. Phys. 77, 1616-1620 (1995).
16. K. Domen, A. Kuramata, and T. Tanahashi, Proceedings of the Second International Conference on Nitride Semiconductors, 236 (Tokushima, 1997)
17. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Digest of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 35 (1997)
18. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69, 4188-4190 (1996).
19. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura, Appl. Phys. Lett. 70, 981-983 (1997).