Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-XN quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 3, 1998, Pages 526-534

  Yeo, Yee Chia ^a,b,c,d,e,h   Chong, T C ^a,f,g,h,i,j   Li, Ming Fu ^{a,h,k,l,m,n,o,p}   Fan, Wei Jun ^a,n,q,r  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MARTLESHAM HEATH   (United Kingdom)

^d IEEE   (Singapore)

^e Institute of Engineers   (Singapore)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^h Tokyo Institute of Technology ^*

ⁱ DATA STORAGE INSTITUTE   (Singapore)

^j JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^k FUDAN UNIVERSITY   (China)

^l UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^m INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

ⁿ INSTITUTE OF SEMICONDUCTORS   (China)

^o UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^p LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^q NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^r MBE Technology Pte Limited   (Singapore)

more..

Author keywords

Gallium nitride; Optical materials devices; Quantum wells; Quantum well lasers; Semiconductor lasers; Strain

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; NUMERICAL METHODS; OPTICAL MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

GALLIUM NITRIDE; MOLE FRACTION; OPTICAL GAIN SPECTRA; QUANTUM CONFINEMENT;

QUANTUM WELL LASERS;

EID: 0032028639     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.661462     Document Type: Article

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