Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 100-101

  Loh, W Y ^a   Hung, P Y ^a   Coss, B E ^a   Kalra, P ^a   Ok, Injo ^a   Smith, Greg ^a   Kang, C Y ^a   Lee, S H ^b   Oh, J ^a   Sassman, B ^a   Majhi, P ^b   Kirsch, P ^a   Tseng, H H ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b Auniv of Texas ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL PHASE; EPITAXIAL SI; MOSFETS; N ION IMPLANTATION; N-CHANNEL; NI SILICIDE; NMOSFETS; SCHOTTKY BARRIERS; SERIES RESISTANCES; SILICIDE FORMATION; THERMAL STABILITY;

ION BOMBARDMENT; ION IMPLANTATION; MOSFET DEVICES; NICKEL COMPOUNDS; PHASE MODULATION; SCHOTTKY BARRIER DIODES; SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71049163016     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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