Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 108-109

  Lee, Rinus T P ^a   Liow, Tsung Yang ^a   Tan, Kian Ming ^a   Lim, Andy Eu Jin ^a   Ho, Chee Seng ^a   Hoe, Keat Mum ^c   Lai, M Y ^b   Osipowicz, Thomas ^a   Lo, Guo Qiang ^c   Samudra, Ganesh ^a   Chi, Dong Zhi ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HEALTH; NICKEL;

ALUMINIDE; ENHANCED PERFORMANCE; N CHANNEL; NICKEL ALUMINIDE (NIAL); SCHOTTKY; SERIES RESISTANCE (ESR); VLSI TECHNOLOGIES;

NICKEL ALLOYS;

EID: 47249088628     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339746     Document Type: Conference Paper

References (8)

1. A. Dixit et al., IEEE TED. pp. 1132-1140, 2005.
2. H. Shang et al., Symp. VLSI Tech., pp. 66-67, 2006.
3. A. Kaneko et al., IEDM Tech. Dig., pp. 893-896, 2006.
4. A. Kinoshita et al., Symp. VLSI Tech., pp. 158-159, 2005.
5. Y.H. Kim et al., IEDM Tech. Dig., pp. 1069-1072, 20005.
6. K. Richter et al., Appl. Phys. Lett. pp. 497-499, 2003.
7. Rinus T.P. Lee et al., IEDM Tech. Dig., pp. 851-854, 2006.
8. Rinus T.P. Lee et al., Symp. MRS Spring., pp. D02-04, 2006.