Majority-carrier capture cross section of amphoteric nickel center in silicon studied by isothermal capacitance transient spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 A, 1996, Pages 4624-4625

  Tanaka, Shuji ^a   Matsushita, Kaiji ^b   Kitagawa, Hajime ^a  

^a FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

^b Niihama Technical High School   (Japan)

Author keywords

Capture cross section; ICTS; Neutral capture; Nickel center; Silicon

Indexed keywords

CAPTURE CROSS SECTION;

CAPACITANCE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; NICKEL; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL DIFFUSION IN SOLIDS;

SEMICONDUCTOR MATERIALS;

EID: 0030232466     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4624     Document Type: Article

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