Substrate orientation dependent suppression of NiSi induced junction leakage by fluorine and nitrogen incorporation

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2388-2397

  Tsuchiaki, Masakatsu ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Fluorine; Implantation; Junction leakage; Nickel; Nitrogen; Substrate orientation; Suicide; Thermal instability

Indexed keywords

CRYSTAL GROWTH; FLUORINE; GRAIN BOUNDARIES; ION BOMBARDMENT; ION IMPLANTATION; NICKEL COMPOUNDS; NITROGEN; PHASE INTERFACES; POLARIZATION; SILICIDES; SILICON; SUBSTRATES;

IMPLANTATION; JUNCTION LEAKAGE; SUBSTRATE ORIENTATION; SUICIDE; THERMAL INSTABILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54249091221     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2388     Document Type: Article

References (29)

1. T. Morimoto, T. Ohguro, H. Momose, T. linuma, T. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai: IEEE Trans. Electron Devices 42 (1995) 915.
2. H. Iwai, T. Ohguro, and S. Ohmi: Microclcciron. Eng. 60 (2002) 157.
3. A. Vantomme, M. Nicolet, and N. Theodore: J. Appl. Phys. 75 (1994) 3882.
4. E. K. Broadbent, R. F. Irani, A. E. Morgan, and P. Mailot: IEEE Trans. Electron Devices 36 (1989) 2440.
5. M. Tsuchiaki, C. Hongo, A. Takashima, and K. Ohuchi: Jpn. J. Appl. Phys. 41 (2002) 2437.
6. C. Y. Sung, H. Y. Hung, H. Y. Ng, K. L. Saenger, V. Chan, S. W. Crowder, J. Li, J. A. Ott, R. Bendernagel, J. J. Kempisty, V. Ku, H. K. Lee, Z. Luo, A. Manden, R. T. Mo, P. Y. Nguyen, G. Pfeiffer, M. Raccioppo, N. Rovedo, D. Sandra, J. P. deSouza, R. Zhang, Z. Ren, and C. W. Wann: IEDM Tech. Dig., 2005, p. 235.
7. K. Uchida, A. Kinoshita, and M. Saito: IEDM Tech. Dig., 2006, p. 1019.
8. M. Tsuchiaki and A. Nishiyama: Jpn. J. Appl. Phys. 46 (2007) 1830.
9. J. S. Maa, Y. Ono, D. J. Tweet, F. Zhang, and S. T. Hsu: J. Vac. Sci. Tcchnol. A 19 (2001) 1595.
10. D. Z. Chi, D. Mangelinck, S. K. Lahiri, P. S. Lee, and K. L. Pey: Appl. Phys. Lett. 78 (2001) 3256.
11. M. Tsuchiaki, A. Murakoshi, and C. Hongo: Jpn. J. Appl. Phys. 42 (2003) 1847.
12. K. Itonaga, K. Eriguchi, I. Miyanaga, A. Kajiya, M. Ogura, T. Tsutsumi, H. Sayama, H. Oda, T. Eimori, and H. Morimoto: Symp. VLSI Technology Dig. Tech. Pap., 2002, p. 136.
13. T. Chao and L. Lee: Jpn. J. Appl. Phys. 41 (2002) L124.
14. A. S. W. Wong, D. Z. Chi, M. Loomans, D. Ma, M. Y. Lai, W. C. Tjiu, S. J. Chua, C. W. Lira, and J. E. Greene: Appl. Phys. Lett. 81 (2002)5138.
15. M. Tsuchiaki, K. Ohuchi, and A. Nishiyama: Jpn. J. Appl. Phys. 44 (2005) 1673.
16. M. Tsuchiaki, K. Ohuchi, and C. Hongo: Jpn. J. Appl. Phys. 43 (2004) 5166.
17. K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, Y. Toda, T. Nakamura, T. Yamazaki, and T. Sugii: IEEE Trans. Electron Devices 46 (1999) 117.
18. Handbook of Ion Implantation Technology, ed. J. F. Ziegler (Elsevier, Amsterdam, 1992).
19. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley-Interscience, New York, 1998) p. 321.
20. Y. Kamiura: Basic Properties of Defects in Silicon and Their Characterization Techniques (Realize Inc., Tokyo, 1997) p. 119.
21. F. D. Auret, P. N. Deenapanaray, S. A. Goodman, W. E. Meyer, and G. Myburg: J. Appl. Phys. 83 (1998) 5576.
22. T. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi, and K. Taniguchi: IEDM Tech. Dig., 2002, p. 821.
23. R. Jones, S. Oberg, F. B. Rasmussen, and B. B. Nielsen: Phys. Rev. Lett. 72 (1994) 1882.
24. H. J. Htein: Appl. Phys. Lett. 47 (1985) 1339.
25. R. R. Robinson and M. E. Law: IEDM Tech. Dig., 2002, p. 883.
26. M. Diebel and S. T. Dunham: Phys. Rev. Lett. 93 (2004) 245901.
27. T. Itoh and T. Abe: Appl. Phys. Lett. 53 (1988) 39.
28. Smithells Metal Reference Book, ed. E. Brandesi (Butterworth-Heinemann, Oxford, U.K., 1992).
29. T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose, and H. Iwai: IEDM. Tech. Dig., 1995, p. 453.