Suppression of thermally induced leakage of NiSi-silicided shallow junctions by pre-silicide fluorine implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1673-1681

  Tsuchiaki, Masakatsu ^a   Ohuchi, Kazuya ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Blockage; Fluorine; Implantation; Junction leakage; Ni diffusion; Nickel; Nitrogen; Silicide; Thermal instability

Indexed keywords

DIFFUSION; FLUORINE; HEAT TREATMENT; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; METALLIC FILMS; NICKEL COMPOUNDS; NITROGEN; THERMODYNAMIC STABILITY;

BLOCKAGE; IMPLANTATION; JUNCTION LEAKAGE; NI DIFFUSION; SILICIDES; THERMAL INSTABILITY;

SEMICONDUCTOR JUNCTIONS;

EID: 21244497798     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1673     Document Type: Article

References (19)

1. A. Vantomme, M. Nicolet and N. Thepdore: J. Appl. Phys. 75 (1994) 3882.
2. E. K. Broadbent, R. F. Irani, A. E. Morgan and P. Mailot: IEEE Trans. Electron Devices 36 (1989) 2440.
3. M. Tsuchiaki, C. Hongo, A. Takashima and H. Ohuchi: Jpn. J. Appl. Phys. 41 (2002) 2437.
4. M. Tsuchiaki, A. Murakoshi and C. Hongo: Jpn. J. Appl. Phys. 42 (2003) 1847.
5. T. Morimoto, T. Ohguro, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata and H. Iwai: IEEE Trans. Electron Devices 42 (1995) 915.
6. H. Iwai, T. Ohguro and S. Ohmi: Microelectron. Eng. 60 (2002) 157.
7. M. C. Poon, F. Deng, M. Chan, W. Y. Chan and S. S. Lau: Appl. Surf. Sci. 157 (2000) 29.
8. T. Ohguro, T. Morimoto, Y. Ushiku and H. Iwai: Ext. Abstr. SSDM, 1993, p. 192.
9. M. Tsuchiaki, K. Ohuchi and C. Hongo: Jpn. J. Appl. Phys. 43 (2004) 5166.
10. D. Z. Chi, D. Mangelinck, S. K. Lahiri, P. S. Lee and K. L. Pey: Appl. Phys. Lett. 78 (2001) 3256.
11. T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose and H. Iwai: Int. Electron Devices Meet. Tech. Dig., 1995, p. 453.
12. K. Itonaga, K. Eriguchi, I. Miyanaga, A. Kajiya, M. Ogura, T. Tsutsumi, H. Sayama, H. Oda, T. Eimori and H. Morimoto: Dig. Tech. Pap., VLSI Symp. 2002, p. 136.
13. T. Chao and L. Lee: Jpn. J. Appl. Phys. 41 (2002) L124.
14. A. S. W. Wong, D. Z. Chi, M. Loomans, D. Ma, M. Y. Lai, W. C. Tjiu, S. J. Chua, C. W. Lim and J. E. Greene: Appl. Phys. Lett. 81 (2002) 5138.
15. K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki and T. Sugii: Int. Electron Devices Meet. Tech. Dig., 1995, p. 449.
16. K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, Y. Toda, T. Nakamura, T. Yamazaki and T. Sugii: IEEE Trans. Electron Devices 46 (1999) 117.
17. Smithells Metal Reference Book, ed. E. Brandesi (Butterworth-Heinemann, Oxford, 1992).
18. M. Iwai, A. Oishi, T. Sanuki, Y. Takegawa, T. Komoda, Y. Morimasa, K. Ishimaru, M. Takayanagi, K. Eguchi, D. Matsushita, K. Muraoka, K. Sonouchi and T. Noguchi: Dig. Tech. Pap., VLSI Symp. 2004, p. 12.
19. J. M. Sung, C. Y. Lu, M. L. Chen and S. J. Hillenius: Int. Electron Devices Meet. Tech. Dig., 1989, p. 447.