Nitrogen impurity effects on nickel silicide formation at low temperatures - New "nitrogen co-plasma" approach

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2005-2008

  Imbert, B ^a,b   Gregoire, M ^b   Zoll, S ^b   Beneyton, R ^b   Del Medico, S ^b   Trouiller, C ^b   Thomas, O ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Ni3Si2; Nickel; Nitrogen; Silicide; Thermal stability

Indexed keywords

DOPING (ADDITIVES); FLOW OF GASES; IMPURITIES; NICKEL; NICKEL COMPOUNDS; NITROGEN; PLASMA STABILITY; SILICIDES; SILICON WAFERS; THERMODYNAMIC STABILITY;

LOW TEMPERATURES; NI3SI2; NICKEL SILICIDE; NITROGEN GAS FLOW; NITROGEN IMPURITY; NITROGEN INCORPORATION; PHASE FORMATIONS; SILICIDE FORMATION;

NITROGEN PLASMA;

EID: 52149112090     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.021     Document Type: Article

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