Silicides and germanides for nano-CMOS applications

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 144-154

  Kittl, J A ^a   Opsomer, K ^a   Torregiani, C ^a   Demeurisse, C ^a   Mertens, S ^a   Brunco, D P ^a   Van Dal, M J H ^a   Lauwers, A ^a  

^a IMEC   (Belgium)

Author keywords

CMOS; Germanide; NiGe; NiSi; Silicide

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; NICKEL; NICKEL COMPOUNDS; NUCLEATION; PLATINUM COMPOUNDS; RAPID THERMAL PROCESSING; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

CMOS; GERMANIDES; HISTORICAL EVOLUTIONS; LOW RESISTIVITY; NANO CMOS; NI-SILICIDE; NUCLEATION DENSITIES; SILICIDE PHASE; STABILITY ISSUES; TI SILICIDE;

SILICIDES;

EID: 56949103258     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.033     Document Type: Article

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