The effect of random dopant fluctuation on specific contact resistivity

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 273-281

  Vega, Reinaldo A ^a   Lee, Vincent C ^b   King Liu, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Dopant segregation; Random dopant fluctuation (RDF); Schottky barrier (SB); Specific contact resistivity

Indexed keywords

ANALYTICAL MODEL; BAND GAP NARROWING; CONTACT AREAS; CONTACT PARAMETERS; DOPANT CONCENTRATIONS; DOPANT SEGREGATION; IMAGE FORCE; INTERFACE DIPOLE; RANDOM DOPANT FLUCTUATION; ROADMAP; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTIVITY;

SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); TECHNOLOGICAL FORECASTING;

THRESHOLD VOLTAGE;

EID: 73349098396     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035027     Document Type: Article

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