Evaluation of transmission line model structures for silicide-to-silicon specific contact resistance extraction

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1170-1176

  Stavitski, Natalie ^a   van Dal, Mark J H ^b   Lauwers, Anne ^c   Vrancken, Christa ^c   Kovalgin, Alexey Y ^a   Wolters, Rob A M ^a,d  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b Taiwan Semiconductor Manufacturing Company Research Center   (Belgium)

^c IMEC   (Belgium)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Nickel silicide (NiSi); Platinum silicide (PtSi); Silicide; Specific contact resistance; Transmission line model (TLM)

Indexed keywords

CONTACT RESISTANCE; NICKEL COMPOUNDS; OPTIMIZATION; PLATINUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSMISSION LINE THEORY;

NICKEL SILICIDE (NISI); PLATINUM SILICIDE (PTSI); SPECIFIC CONTACT RESISTANCE; TRANSMISSION LINE MODEL (TLM);

CMOS INTEGRATED CIRCUITS;

EID: 43749104248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.918658     Document Type: Article

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