Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Knoch, J ^a   Zhang, M ^a   Zhao, Q T ^a   Lenk, St ^a   Mantl, S ^a   Appenzeller, J ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT SEGREGATION; SCHOTTKY BARRIER LOWERING; SILICON-ON-INSULATOR; SILICON-ON-INSULATOR SCHOTTKY-BARRIER;

FIELD EFFECT SEMICONDUCTOR DEVICES; INSULATING MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; TRANSISTORS;

ELECTRIC FIELDS;

EID: 29744445306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150581     Document Type: Article

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