Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 360-372

  Curley, G A ^a   Gatilova, L ^a   Guilet, S ^a   Bouchoule, S ^a   Gogna, G S ^b   Sirse, N ^b   Karkari, S ^b   Booth, J P ^c  

^a CNRS   (France)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CL ATOMS; CL SURFACE; ELECTRON DENSITIES; ETCHING CONDITION; II-IV SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA ETCHER; LINE INTENSITIES; LOSS KINETICS; LOSS RATES; OPTICAL EMISSIONS; PLASMA PULSE; PROBE MEASUREMENTS; REACTOR WALLS; SURFACE LOSS RATE; SURFACE RECOMBINATIONS; TEMPORAL EVOLUTION; TIME RESOLVED OPTICAL EMISSION SPECTROSCOPY; TIME-RESOLVED; TIME-RESOLVED ACTINOMETRY; TIME-SCALES;

CARRIER CONCENTRATION; COUPLED CIRCUITS; ELECTRIC DISCHARGES; ELECTRON DENSITY MEASUREMENT; ELECTRONS; EMISSION SPECTROSCOPY; ETCHING; LIGHT EMISSION; METEOROLOGICAL INSTRUMENTS; OPTICAL EMISSION SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES;

INDUCTIVELY COUPLED PLASMA;

EID: 77949358042     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3330766     Document Type: Article

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