Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 387-393

  Strasser, P ^a   Wuest R ^a   Robin, F ^a   Erni, D ^b   Jackel H ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; INDUCTIVELY COUPLED PLASMA; NITROGEN; PHOTONIC CRYSTALS; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

ETCHING POWER; OPTICAL LOSS; TELECOMMUNICATION WAVELENGTHS;

OPTICAL FIBER FABRICATION;

EID: 34047146534     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2712198     Document Type: Article

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