Optimization of an inductively coupled plasma etching process of GalnP/ GaAs based material for photonic band gap applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1521-1526

  Combri S ^a,b   Bansropun, S ^a   Lecomte, M ^a,c   Parillaud, O ^a,c   Cassette, S ^a   Benisty, H ^b   Nagle, J ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

^c ALCATEL THALES III V LAB   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; TRENCHING;

DEEP ETCHING; INDUCTIVELY COUPLED PLASMA (ICP); RIDGE WAVEGUIDES;

PLASMA ETCHING;

EID: 31144435291     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1993617     Document Type: Article

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