Anisotropic and smooth inductively coupled plasma etching of III-V laser waveguides using HBr-O2 chemistry

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Bouchoule, S ^a   Azouigui, S ^a   Guilet, S ^a   Patriarche, G ^a   Largeau, L ^a   Martinez, A ^a   Le Gratiet, L ^a   Lemaitre, A ^a   Lelarge, F ^b  

^a CNRS   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; ELECTROCHEMICAL ELECTRODES; ETCHING; GALLIUM ALLOYS; INDIUM ARSENIDE; LASERS; NONMETALS; PASSIVATION; PHOTORESISTS; PLASMA ETCHING; PLASMAS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; WAVEGUIDES;

CHEMICAL ETCH; DIELECTRIC MASKS; ENERGY DISPERSIVE X-RAY ANALYSIS; ETCH RATES; ETCHED SURFACES; ETCHING PROCESSES; EX-SITU; GAAS SUBSTRATES; HETEROSTRUCTURES; ICP ETCHING; INDUCTIVELY COUPLED PLASMA ETCHING; LASER WAVEGUIDES; LATERAL ETCHING; PASSIVATION LAYERS; QUANTUM DOT; RIDGE LASERS; RIDGE WAVE-GUIDE; SI-RICH SILICON OXIDE; SI-WAFER; TRANSMISSION ELECTRON; WAVEGUIDE LOSSES;

INDUCTIVELY COUPLED PLASMA;

EID: 51849143731     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2965790     Document Type: Article

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