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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2270-2279

Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O2 steps for etching of GaAs with high selectivity

(6) Golka, S a Arens, M a Reetz, M a Kwapien, T a Bouchoule, S b Patriarche, G b

a SENTECH INSTRUMENTS GMBH (Germany)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHOPPING SEQUENCES; DIFFRACTIVE ELEMENT; DRY ETCHING PROCESS; FEATURE SIZES; GAAS; GAS FEED; HIGH SELECTIVITY; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; INDUCTIVELY-COUPLED; LATERAL STRUCTURES; OPTIMIZATION PROCEDURES; SIDEWALL MORPHOLOGY; TIME MULTIPLEXED;

ASPECT RATIO; DRY ETCHING; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; INDUCTIVELY COUPLED PLASMA; OPTICAL EMISSION SPECTROSCOPY; PASSIVATION; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; TIME DIVISION MULTIPLEXING;

REACTIVE ION ETCHING;

EID: 70349673589 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3225599 Document Type: Article

Times cited : (11)

References (27)

1
- 0004740138
- High-density plasma etching of compound semiconductors
- DOI 10.1116/1.580696
- R. J. Shul, G. B. McClellan, R. D. Briggs, D. J. Rieger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine, and C. Barratt, J. Vac. Sci. Technol. A 0734-2101 15, 633 (1997). 10.1116/1.580696 (Pubitemid 127081979)
- (1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.15 , Issue.3 NUMBER 1 , pp. 633-637
- Shul, R.J.¹ McClellan, G.B.² Briggs, R.D.³ Rieger, D.J.⁴ Pearton, S.J.⁵ Abernathy, C.R.⁶ Lee, J.W.⁷ Constantine, C.⁸ Barratt, C.⁹

2
- 43349097671
- A terahertz quantum cascade laser grown by low-pressure metalorganic vapor phase epitaxy
- DOI 10.1063/1.2924294
- L. Sirigu, A. Rudra, E. Kapon, M. I. Amanti, G. Scalari, and J. Faist, Appl. Phys. Lett. 0003-6951 92, 181111 (2008). 10.1063/1.2924294 (Pubitemid 351661980)
- (2008) Applied Physics Letters , vol.92 , Issue.18 , pp. 181111
- Sirigu, L.¹ Rudra, A.² Kapon, E.³ Amanti, M.I.⁴ Scalari, G.⁵ Faist, J.⁶

3
- 42149182447
- Terahertz quantum cascade lasers based on two-dimensional photonic crystal resonators
- DOI 10.1364/OE.16.005206
- L. Sirigu, R. Terazzi, M. I. Amanti, M. Giovannini, J. Faist, L. A. Dunbar, and R. Houdre, Opt. Express 1094-4087 16, 5206 (2008). 10.1364/OE.16.005206 (Pubitemid 351544141)
- (2008) Optics Express , vol.16 , Issue.8 , pp. 5206-5217
- Sirigu, L.¹ Terazzi, R.² Amanti, M.I.³ Giovannini, M.⁴ Faist, J.⁵ Dunbar, L.A.⁶ Houdre, R.⁷

4
- 55149101791
- 0003-6951,. 10.1063/1.3012385
- O. P. Marshall, V. Apostolopoulos, J. R. Freeman, R. Rungsawang, H. E. Beere, and D. A. Ritchie, Appl. Phys. Lett. 0003-6951 93, 171112 (2008). 10.1063/1.3012385
- (2008) Appl. Phys. Lett. , vol.93 , pp. 171112
- Marshall, O.P.¹ Apostolopoulos, V.² Freeman, J.R.³ Rungsawang, R.⁴ Beere, H.E.⁵ Ritchie, D.A.⁶

5
- 0345306760
- Quantum Cascade Surface-Emitting Photonic Crystal Laser
- DOI 10.1126/science.1090561
- R. Colombelli, Science 0036-8075 302, 1374 (2003). 10.1126/science. 1090561 (Pubitemid 37452174)
- (2003) Science , vol.302 , Issue.5649 , pp. 1374-1377
- Colombelli, R.¹ Srinivasan, K.² Troccoli, M.³ Painter, O.⁴ Gmachl, C.F.⁵ Tennant, D.M.⁶ Sergent, A.M.⁷ Sivco, D.L.⁸ Cho, A.Y.⁹ Capasso, F.¹⁰

6
- 33750000623
- Band structure mapping of photonic crystal intersubband detectors
- DOI 10.1063/1.2361186
- S. Schartner, S. Golka, C. Pflügl, W. Schrenk, A. M. Andrews, T. Roch, and G. Strasser, Appl. Phys. Lett. 0003-6951 89, 151107 (2006). 10.1063/1.2361186 (Pubitemid 44570506)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 151107
- Schartner, S.¹ Golka, S.² Pflugl, C.³ Schrenk, W.⁴ Andrews, A.M.⁵ Roch, T.⁶ Strasser, G.⁷

7
- 0037966950
- 0031-9007,. 10.1103/PhysRevLett.90.116401
- D. Dini, R. Köhler, A. Tredicucci, G. Biasol, and L. Sorba, Phys. Rev. Lett. 0031-9007 90, 116401 (2003). 10.1103/PhysRevLett.90.116401
- (2003) Phys. Rev. Lett. , vol.90 , pp. 116401
- Dini, D.¹ Köhler, R.² Tredicucci, A.³ Biasol, G.⁴ Sorba, L.⁵

8
- 0037450262
- 0003-6951,. 10.1063/1.1545167
- R. Ferrini, B. Lombardet, B. Wild, R. Houdre, and G. -H. Duan, Appl. Phys. Lett. 0003-6951 82, 1009 (2003). 10.1063/1.1545167
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1009
- Ferrini, R.¹ Lombardet, B.² Wild, B.³ Houdre, R.⁴ Duan, G.-H.⁵

9
- 17944375999
- Quantum cascade lasers with lateral double-sided distributed feedback grating
- DOI 10.1063/1.1883332, 111103
- S. Golka, C. Pflügl, W. Schrenk, and G. Strasser, Appl. Phys. Lett. 0003-6951 86, 111103 (2005). 10.1063/1.1883332 (Pubitemid 40596972)
- (2005) Applied Physics Letters , vol.86 , Issue.11 , pp. 1-3
- Golka, S.¹ Pflugl, C.² Schrenk, W.³ Strasser, G.⁴

10
- 31644433931
- Device performance and wavelength tuning behavior of ultra-short quantum-cascade microlasers with deeply etched Bragg-mirrors
- DOI 10.1109/JSTQE.2005.853849
- S. Höfling, J. P. Reithmaier, and A. Forchel, IEEE J. Sel. Top. Quantum Electron. 1077-260X 11, 1048 (2005). 10.1109/JSTQE.2005.853849 (Pubitemid 43172649)
- (2005) IEEE Journal on Selected Topics in Quantum Electronics , vol.11 , Issue.5 , pp. 1048-1054
- Hofling, S.¹ Reithmaier, J.P.² Forchel, A.³

11
- 4944245125
- 1071-1023,. 10.1116/1.1767106
- M. V. Kotlyar, L. O'Faolain, R. Wilson, and T. F. Krauss, J. Vac. Sci. Technol. B 1071-1023 22, 1788 (2004). 10.1116/1.1767106
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 1788
- Kotlyar, M.V.¹ O'Faolain, L.² Wilson, R.³ Krauss, T.F.⁴

12
- 0036565090
- Deep in situ dry-tech monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling
- DOI 10.1116/1.1468652
- H. Moussa, R. Daneau, C. Meriadec, L. Manin, I. Sagnes, and R. Raj, J. Vac. Sci. Technol. A 0734-2101 20, 748 (2002). 10.1116/1.1468652 (Pubitemid 34648320)
- (2002) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.20 , Issue.3 , pp. 748-753
- Moussa, H.¹ Daneau, R.² Meriadec, C.³ Manin, L.⁴ Sagnes, I.⁵ Raj, R.⁶

13
- 29044445780
- 1071-1023,. 10.1116/1.2131084
- S. Varoutsis, J. Vac. Sci. Technol. B 1071-1023 23, 2499 (2005). 10.1116/1.2131084
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 2499
- Varoutsis, S.¹

14
- 0038914771
- 1071-1023,. 10.1116/1.587518
- Y. P. Song, P. D. Wang, C. M. Sotomayor Torres, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B 1071-1023 12, 3388 (1994). 10.1116/1.587518
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 3388
- Song, Y.P.¹ Wang, P.D.² Torres, C.M.S.³ Wilkinson, C.D.W.⁴

15
- 0343695320
- 1071-1023,. 10.1116/1.589036
- H. Takano, K. Sumitani, H. Matsuoka, K. Sato, O. Ishihara, and N. Tsubouchi, J. Vac. Sci. Technol. B 1071-1023 14, 112 (1996). 10.1116/1.589036
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 112
- Takano, H.¹ Sumitani, K.² Matsuoka, H.³ Sato, K.⁴ Ishihara, O.⁵ Tsubouchi, N.⁶

16
- 41549169628
- 1071-1023,. 10.1116/1.2898455
- S. Bouchoule, G. Patriarche, S. Guilet, L. Gatilova, L. Largeau, and P. Chabert, J. Vac. Sci. Technol. B 1071-1023 26, 666 (2008). 10.1116/1.2898455
- (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 666
- Bouchoule, S.¹ Patriarche, G.² Guilet, S.³ Gatilova, L.⁴ Largeau, L.⁵ Chabert, P.⁶

17
- 2142784216
- 0277-786X,. 10.1117/12.524471
- L. A. Donohue, J. Hopkins, R. Barnett, A. Newton, and A. Barker, Proc. SPIE 0277-786X 5347, 44 (2004). 10.1117/12.524471
- (2004) Proc. SPIE , vol.5347 , pp. 44
- Donohue, L.A.¹ Hopkins, J.² Barnett, R.³ Newton, A.⁴ Barker, A.⁵

18
- 34249895263
- Low bias reactive ion etching of GaAs with a Si Cl4 N2 O2 time-multiplexed process
- DOI 10.1116/1.2737439
- S. Golka, S. Schartner, W. Schrenk, and G. Strasser, J. Vac. Sci. Technol. B 1071-1023 25, 839 (2007). 10.1116/1.2737439 (Pubitemid 46872376)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.3 , pp. 839-844
- Golka, S.¹ Schartner, S.² Schrenk, W.³ Strasser, G.⁴

19
- 0033267057
- 1071-1023,. 10.1116/1.591061
- B. Volland, F. Shi, P. Hudek, H. Heerlein, and Ivo. W. Rangelow, J. Vac. Sci. Technol. B 1071-1023 17, 2768 (1999). 10.1116/1.591061
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 2768
- Volland, B.¹ Shi, F.² Hudek, P.³ Heerlein, H.⁴ Rangelow, I.W.⁵

20
- 51849143731
- 0013-4651,. 10.1149/1.2965790
- S. Bouchoule, S. Azouigui, S. Guilet, G. Patriarche, L. Largeau, A. Martinez, L. Le Gratiet, A. Lemaitre, and F. Lelarge, J. Electrochem. Soc. 0013-4651 155, H778 (2008). 10.1149/1.2965790
- (2008) J. Electrochem. Soc. , vol.155 , pp. 778
- Bouchoule, S.¹ Azouigui, S.² Guilet, S.³ Patriarche, G.⁴ Largeau, L.⁵ Martinez, A.⁶ Le Gratiet, L.⁷ Lemaitre, A.⁸ Lelarge, F.⁹

21
- 61449194248
- 0734-2101,. 10.1116/1.3071950
- L. Gatilova, S. Bouchoule, S. Guilet, and P. Chabert, J. Vac. Sci. Technol. A 0734-2101 27, 262 (2009). 10.1116/1.3071950
- (2009) J. Vac. Sci. Technol. A , vol.27 , pp. 262
- Gatilova, L.¹ Bouchoule, S.² Guilet, S.³ Chabert, P.⁴

22
- 7544230698
- 0021-8979,. 10.1063/1.1786338
- G. Cunge, M. Kogelschatz, and N. Sadeghi, J. Appl. Phys. 0021-8979 96, 4578 (2004). 10.1063/1.1786338
- (2004) J. Appl. Phys. , vol.96 , pp. 4578
- Cunge, G.¹ Kogelschatz, M.² Sadeghi, N.³

23
- 0020153843
- 0013-4651,. 10.1149/1.2124216
- R. H. Burton and G. Smolinsky, J. Electrochem. Soc. 0013-4651 129, 1599 (1982). 10.1149/1.2124216
- (1982) J. Electrochem. Soc. , vol.129 , pp. 1599
- Burton, R.H.¹ Smolinsky, G.²

24
- 84984321627
- 0863-1042,. 10.1002/ctp2150300515
- H. -J. Tiller and S. Sameith, Contrib. Plasma Phys. 0863-1042 30, 703 (1990). 10.1002/ctpp.2150300515
- (1990) Contrib. Plasma Phys. , vol.30 , pp. 703
- Tiller, H.-J.¹ Sameith, S.²

25
- 0036494223
- 2 plasma etching of Si
- DOI 10.1116/1.1450578
- S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 0734-2101 20, 499 (2002). 10.1116/1.1450578 (Pubitemid 34405119)
- (2002) Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films , vol.20 , Issue.2 , pp. 499-506
- Ullal, S.J.¹ Singh, H.² Vahedi, V.³ Aydil, E.S.⁴

26
- 0035270252
- X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
- DOI 10.1116/1.1352727
- L. Desvoivres, L. Vallier, and O. Joubert, J. Vac. Sci. Technol. B 1071-1023 19, 420 (2001). 10.1116/1.1352727 (Pubitemid 32450489)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.2 , pp. 420-426
- Desvoivres, L.¹ Vallier, L.² Joubert, O.³

27
- 42949103124
- Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies
- DOI 10.1116/1.2909966
- A. Agarwal and M. J. Kushner, J. Vac. Sci. Technol. A 0734-2101 26, 498 (2008). 10.1116/1.2909966 (Pubitemid 351620218)
- (2008) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.26 , Issue.3 , pp. 498-512
- Agarwal, A.¹ Kushner, M.J.²

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