Optimization of a Cl2-H2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2381-2387

  Guilet, S ^a   Bouchoule, S ^a   Jany, C ^b   Corr, C S ^c,d   Chabert, P ^c  

^a CNRS   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c ECOLE POLYTECHNIQUE   (France)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; HYDROGEN; INDIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; PHOTOLUMINESCENCE;

MICRO PHOTOLUMINESCENCE MEASUREMENTS; RIDGE WAVEGUIDES; VERTICAL SIDEWALLS; WAFERS;

CHLORINE COMPOUNDS;

EID: 33749354397     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348728     Document Type: Article

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