Low bias reactive ion etching of GaAs with a Si Cl4 N2 O2 time-multiplexed process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 839-844

  Golka, S ^a   Schartner, S ^a   Schrenk, W ^a   Strasser, G ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; CHLORINE; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SEMICONDUCTOR MATERIALS; THIN FILMS;

ETCH FLOORS; INTERMEDIATE MASKS; SIDEWALLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34249895263     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2737439     Document Type: Article

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