Current status of graphene transistors

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 499-509

  Lemme, M C ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Graphene; Mobility; MOSFET; Non volatile memory; Transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEFECTS; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; CARRIER MOBILITY; NANORIBBONS; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

ANALOG RADIO; BAND GAPS; CURRENT STATUS; ENERGY BANDGAPS; FUTURE MEMORY; GRAPHENE NANORIBBONS; GRAPHENE TRANSISTORS; GRAPHENES; LOGIC APPLICATIONS; METROLOGY METHODS; MOS-FET; NON-VOLATILE MEMORY TRANSISTORS; SILICON CMOS; SWITCHING MECHANISM; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE NANORIBBONS (GNRS); NON-VOLATILE MEMORY;

GRAPHITE; GRAPHENE TRANSISTORS;

EID: 75849148618     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.499     Document Type: Conference Paper

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