Mobility in graphene double gate field effect transistors

Solid-State Electronics

Volumn 52, Issue 4, 2008, Pages 514-518

  Lemme, M C ^a   Echtermeyer, T J ^a   Baus, M ^a   Szafranek, B N ^a   Bolten, J ^a   Schmidt, M ^a   Wahlbrink, T ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

Field effect transistor; Graphene; Mobility; SOI

Indexed keywords

CARRIER MOBILITY; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

GRAPHENE DEPOSITION; MONOLAYER GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 40749128081     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.054     Document Type: Article

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