Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Nano Letters

Volumn 7, Issue 6, 2007, Pages 1469-1473

  Yan, Qimin ^a   Huang, Bing ^a   Yu, Jie ^a   Zheng, Fawei ^a   Zang, Ji ^b   Wu, Jian ^a   Gu, Bing Lin ^a   Liu, Feng ^b   Duan, Wenhui ^a  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PERFECT INTERFACE JUNCTIONS; EDGE DOPING; GRAPHENE NANORIBBON TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; SEMICONDUCTOR JUNCTIONS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

CARBON; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CARBON; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS;

EID: 34547380841     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070133j     Document Type: Article

References (23)

1. Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Nature 1998, 393, 49-52.
2. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Science 2001, 294, 1317-1320.
3. Rosenblatt, S.; Yaish, Y.; Park, J.; Gore, J.; Sazonova, V.; McEuen, P. L. Nano Lett. 2002, 2, 869-872.
4. Javey, A.; Kim, H.; Brink, M.; Wang, Q.; Ural, A.; Guo, J.; Mcintyre, P.; Mceuen, P.; Lundstrom, M.; Dai, H. Nat. Mater. 2002, 1, 241-246.
5. Javey, A.; Guo, J.; Farmer, D. B.; Wang, Q.; Wang, D.; Gordon, R. G.; Lundstrom, M.; Dai, H. Nano Lett. 2004, 4, 447-450.
6. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306, 666-669.
7. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Nature 2005, 438, 197-200.
8. Zhang, Y.; Tan, Y.-W.; Stormier, H. L.; Kim, P. Nature 2005, 438, 201-204.
9. Berger, C.; Song, Z.; Li, X.; Wu, X.; Brown, N.; Nafud, C.; Mayo, D.; Li, T.; Hass, J.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; de Heer, W. A. Science 2006, 312, 1191-1196.
10. Supporting Information on methods is available online at http://pubs.acs.org.
11. Saito, R.; Dresselhaus, G.; Dresselhaus, M. S. Physical Properties of Carbon Nanotubes; Imperial College Press: London, 1998.
12. Miyamoto, Y.; Nakada, K.; Fujita, M. Phys. Rev. B 1999, 59, 9858-9861.
13. Nakada, K.; Fujita, M.; Dresselhaus, G.; Dresselhaus, M. S. Phys. Rev. B 1996, 54, 17954-17961.
14. Son, Y.; Cohen, M. L.; Louie, S. G. Nature 2006, 444, 347-349.
15. Son, Y.; Cohen, M. L.; Louie, S. G. Phys. Rev. Lett. 2006, 97, 216803.
16. Barone, V.; Hod, O.; Scuseria, G. Nano Lett. 2006, 6, 2748-2754.
17. The convention used so far such as in refs 12-16 names GNRs by edge structure, so an armchair (zigzag) tube would unfold into a zigzag (armchair) ribbon. It lacks a unifying nomenclature for all the ribbons. The size of an armchair ribbon is counted by number of dimer rows, while the size of a zigzag ribbon by number of zigzag rows and the size of a "chiral" ribbon would be hard to count.
18. 15
19. Mermin, N. D.; Wagner, H. Phys. Rev. Lett. 1966, 17, 1133-1136.
20. Shan, B.; Cho, K. Phys. Rev. Lett. 2005, 94, 236602.
21. Chen, Z.; Lin, Y.-M.; Rooks, M. J.; Avouris, P. 2007, cond-mat/0701599.
22. Han, M. Y.; Oezyilmaz, B.; Zhang, Y.; Kim, P. 2007, cond-mat/0702511.
23. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.