Making a field effect transistor on a single graphene nanoribbon by selective doping

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Huang, Bing ^a   Yan, Qimin ^a   Zhou, Gang ^a   Wu, Jian ^a   Gu, Bing Lin ^a   Duan, Wenhui ^a   Liu, Feng ^b  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; NANOSTRUCTURED MATERIALS; NITROGEN;

GRAPHENE; METAL SEMICONDUCTOR METAL JUNCTIONS; QUANTUM TRANSPORT CALCULATIONS;

FIELD EFFECT TRANSISTORS;

EID: 37549038601     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2826547     Document Type: Article

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