Tuning the electrical properties of Si nanowire field-effect transistors by molecular engineering

Small

Volumn 5, Issue 23, 2009, Pages 2761-2769

  Bashouti, Muhammad Y ^a   Tung, Raymond T ^a   Haick, Hossam ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

Field effect transistors; Nanowires; Silicon; Surface states; Work function

Indexed keywords

ADSORPTION OF ORGANIC MOLECULES; CHANNEL CONDUCTANCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GATE VOLTAGES; MOLECULAR ENGINEERING; MOLECULAR LAYER; N TYPE SILICON; NEGATIVE GATE VOLTAGES; ORDERS OF MAGNITUDE; ORGANIC FUNCTIONALITIES; ORGANIC MOLECULES; SI NANOWIRE; SILICON SURFACES; SOURCE-DRAIN; SURFACE STATE; TOP-DOWN APPROACH; X RAY PHOTOEMISSION SPECTROSCOPY;

ADSORPTION; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRON TRAPS; EMISSION SPECTROSCOPY; MOLECULES; NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; TUNING; WORK FUNCTION;

FIELD EFFECT TRANSISTORS;

NANOWIRE; SILICON;

ARTICLE; CHEMICAL ENGINEERING; CHEMICAL MODEL; CHEMISTRY; ELECTROMAGNETIC FIELD; NANOTECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL ENGINEERING; ELECTROMAGNETIC PHENOMENA; MODELS, CHEMICAL; NANOTECHNOLOGY; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; SILICON;

EID: 73349104450     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200901402     Document Type: Article

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