Chemical passivation of silicon nanowires with C1-C6 alkyl chains through covalent SI-C bonds

Journal of Physical Chemistry C

Volumn 112, Issue 49, 2008, Pages 19168-19172

  Bashouti, Muhammad Y ^a   Stelzner, Thomas ^b   Berger, Andreas ^b   Christiansen, Silke ^b,c   Haick, Hossam ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL CHAINS; ATOP SITES; CHEMICAL PASSIVATIONS; FUNCTIONALIZATION; OXIDIZING AGENTS; P-N JUNCTIONS; PRACTICAL IMPORTANCES; SI(1 0 0 ); SI(100) SURFACE; SI-C BONDS; SI/GE SUPERLATTICES; SILICON NANOWIRES; SURFACE STABILITIES;

ALKYLATION; CRYSTAL GROWTH; ELECTRIC WIRE; MOLECULES; OXIDATION; PASSIVATION; SEMICONDUCTOR JUNCTIONS; SILICON; TWO DIMENSIONAL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64349120605     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp8077437     Document Type: Article

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